Light-emitting device with narrow dominant wavelength distribution and method of making the same

ABSTRACT

This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

This application is a continuation-in-part of application Ser. No.12/219,084, filed on Jul. 16, 2008 and issued as U.S. Pat. No. 7,850,321on Dec. 14, 2010.

BACKGROUND

1. Technical Field

A wafer-scaled light-emitting device and manufacturing method thereof isdisclosed, especially is related to a wafer-scaled light-emitting diodewith narrow dominant wavelength distribution and a method of enablingconvergent distribution of dominant wavelength of the wafer-scaledlight-emitting device.

2. Reference to Related Application

This application claims the right of priority based on TW applicationSer. No. 098106259, filed “Feb. 25, 2009”, entitled “LIGHT-EMITTINGDEVICE WITH NARROW DOMINANT WAVELENGTH DISTRIBUTION AND METHOD OF MAKINGTHE SAME” and the contents of which are incorporated herein by referencein its entirety.

3. Description of the Related Art

The light-generating mechanism of a light-emitting diode (LED) is thatthe difference of the energy of electrons moving between an n-typesemiconductor and a p-type semiconductor is released through the form oflight. This light-generating mechanism of the LED is different from thatof incandescent lamps so the LED is titled a cold light source. Besides,LED has advantages like high reliability, long life span, smalldimensions, and electricity saving so the LED has been deemed as anillumination source of a new generation.

FIG. 1A to FIG. 1E show a conventional process flow of manufacturing alight-emitting device. As FIG. 1A shows, a substrate 10 is provided. AsFIG. 1B shows, a plurality of epitaxial stacked layers 12 is formed onthe substrate 10, and the plurality of epitaxial stacked layers 12 isetched by lithography to form a plurality of light-emitting stackedlayers 14, as FIG. 1C shows. Next, as FIG. 1D shows, electrodes 16 areformed on the plurality of light-emitting stacked layers 14 to form anLED wafer 100. Finally, as FIG. 1E shows, the LED wafer 100 is diced toform LED chips 18.

The distribution of the dominant wavelengths of the light-emittingstacked layers 14, however, is not uniform. The difference of thedominant wavelength can be 15 nm˜20 nm or even more so the difference ofthe dominant wavelength of the LED chips 18 formed by the light-emittingstacked layers 14 is large as well. The problem of non-uniformdistribution of the dominant wavelengths further influences theconsistency of characteristics of the products utilizing the LED chips18. Taking the conventional blue LED chip with the 460 nm dominantwavelength cooperating with the yellow phosphors to generate white lightas an example, if the distribution range of the dominant wavelengths ofthe blue LED chips on the same LED wafer reaches 20 nm, namely thedominant wavelengths are between 450 nm and 470 nm, the distribution ofthe color temperatures of the white lights formed by mixing the lightfrom the blue LED chips and the yellow wavelength-converting materialshaving 570 nm excited wavelength is also influenced.

As FIG. 2 shows, because the wide distribution of the dominantwavelengths of each light-emitting stacked layer on the LED wafer, thecolor temperatures of the white lights formed by mixing the light fromthe LED chips and the wavelength-converting materials distribute between6500K and 9500K. With the difference of the color temperatures, which isabout 3000K, the consistency of the quality of the products is affectedsignificantly.

To solve the problem of non-uniform distribution of the dominantwavelength of the light-emitting stacked layers 14, there are probing,sorting, and binning processes in the conventional manufacturing processof the LED chips 18 to screen out the LED chips 18 having similardominant wavelengths for various application demanding differentwavelengths, as FIG. 3 shows.

Although the probing, sorting, and binning processes can reduce theinfluence upon the consistence of the quality caused by non-uniformdistribution of the dominant wavelength, when the products to which theLED chips 18 are applied strictly require a tight distribution of thedominant wavelength, such as the back-light unit having the LED chips inthe large size display, the ratio of the available LED chips 18 on theLED wafer 100 is low. Besides, sorting and binning processes aretime-consuming and laborious, and increase the cost and time ofmanufacturing the LED chips.

SUMMARY

The present application provides an LED wafer with narrow dominantwavelength distribution including a substrate, a plurality oflight-emitting stacked layers formed on the substrate, and a wavelengthtransforming layer formed on the plurality of light-emitting stackedlayers to converge and convert the dominant wavelengths emitted from thelight-emitting stacked layers.

The present application further discloses a method of converging thedominant wavelength distribution of the LED wafer, including the stepsof providing a substrate, forming a plurality of light-emitting stackedlayers on the substrate, and forming a wavelength transforming layer onthe plurality of light-emitting stacked layers to converge the dominantwavelength distribution of each of the plurality of light-emittingstacked layers on the LED wafer.

The present application also provides a method of manufacturing alight-emitting device, including forming a wavelength transforming layerto converge the variation of the dominant wavelengths of thelight-emitting stacked layers to improve the usage efficiency.

Another purpose of the present application is to provide a method ofmanufacturing a light-emitting device, including forming a wavelengthtransforming layer to converge the variation of the dominant wavelengthsof the light-emitting stacked layers to eliminate sorting and binningprocesses in the manufacturing process of LED chips.

The foregoing aspects and many of the attendant purpose, technology,characteristic, and function of this application will become morereadily appreciated as the same becomes better understood by referenceto the following embodiments detailed description, when taken inconjunction with the accompanying drawings

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide easy understanding ofthe application, and are incorporated herein and constitute a part ofthis specification. The drawings illustrate embodiments of theapplication and, together with the description, serve to illustrate theprinciples of the application.

FIGS. 1A-1E illustrate a conventional process flow of manufacturing LEDchips.

FIG. 2 illustrates a conventional CIE 1931 chromaticity diagram of ablue LED combining with yellow phosphor powders.

FIG. 3 illustrates a conventional schematic view of probing of the LEDchips.

FIGS. 4A-4F illustrate a process flow of manufacturing LED chips inaccordance with an embodiment of the present application.

FIG. 5 illustrates a cross-sectional view of the LED chips in accordancewith another embodiment of the present application.

FIG. 6 illustrates a CIE 1931 chromaticity diagram in accordance withthe embodiment of the present application.

FIG. 7 illustrates a cross-sectional view of the LED chips in accordancewith another embodiment of the present application.

FIGS. 8A-8B illustrate cross-sectional views of the LED chips inaccordance with other embodiments of the present application.

FIG. 9 illustrates a schematic view of dicing steps in accordance withanother embodiment of the present application.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

Reference is made in detail to the preferred embodiments of the presentapplication, examples of which are illustrated in the accompanyingdrawings. Wherever possible, the same reference numbers are used in thedrawings and the description to refer to the same or like parts.

FIGS. 4A-4F illustrate a process flow in accordance with an embodimentof the present application. As FIG. 4A shows, a substrate 20 isprovided, wherein the substrate 20 can be an electrical conductivesubstrate. As FIG. 4B shows, a plurality of epitaxial layers 22 isformed on the substrate 20, wherein each of the plurality of epitaxiallayers 22 at least includes a first conductivity-type semiconductorlayer 220, an active layer 222, and a second conductivity-typesemiconductor layer 224. The material of the plurality of epitaxiallayers 22 can be a material including at least one element of Al, Ga,In, N, P, or As, such as GaN series or AlGaInP series material, forexample. The embodiment below takes GaN series material as an examplefor explanation.

As FIG. 4C shows, a plurality of light-emitting stacked layers 24 isformed on the substrate 20 by etching the plurality of epitaxial layers22 with lithography. As FIG. 4D shows, a plurality of electrodes 26 isformed on the plurality of light-emitting stacked layers 24 byevaporation, and an LED wafer 200 is formed.

The plurality of light-emitting stacked layers 24 can emit a pluralityof first lights 210, wherein the dominant wavelengths of the firstlights 210 are between 390 nm and 430 nm. There is a first difference ofthe dominant wavelengths between any two first lights 210, wherein themaximum of the first difference of the dominant wavelengths is a firstdominant wavelength variation V₁.

As FIG. 4E shows, after forming the electrodes 26, a plurality ofwavelength transforming layers 28 is formed to cover the surfaces of theplurality of light-emitting stacked layers 24, wherein the material ofthe plurality of wavelength transforming layers 28 contains fluorescentmaterial or phosphor material. In this embodiment, the plurality ofwavelength transforming layers 28 can be composed of phosphor powder.The material of the wavelength transforming layer 28 can be bluephosphor powder containing one or more than one materials selected froma group consisting of Si₃MgSi₂O₈:Eu, BaMgAl₁₀O₁₇:Eu,(SrBaCa)₅(PO₄)₃Cl:Eu, Sr₃(Al₂O₅)Cl₂:Eu²⁺ and Sr₄Al₁₄O₂₅:Eu. The phosphorpowder is uniformly or partially spread on the surface of thelight-emitting stacked layer 24 so the wavelength transforming layer 28absorbs substantially the whole first light 210 emitted from thelight-emitting stacked layer 24 and converts the first light 210 into asecond light 220. The first light 210 is totally absorbed by theplurality of wavelength transforming layers 28 when the plurality ofwavelength transforming layer is formed on the plurality oflight-emitting stacked layers emitting the first light.

In this embodiment, the dominant wavelengths of the second lights 220are between 450 nm and 470 nm which are blue lights of long wavelength.There is a second difference of the dominant wavelengths between any twosecond lights 220, wherein the maximum of the second difference of thedominant wavelengths is a second dominant wavelength variation V₂.Finally, as FIG. 4F shows, the plurality of light-emitting stackedlayers 24 is diced to form a plurality of LED chips 30.

In the above embodiment, the first dominant wavelength variation V₁ isbetween 15 nm and 20 nm, and the second dominant wavelength variation V₂is less than 10 nm, preferably less than 5 nm. The difference of thedominant wavelengths of the lights from any two of the plurality oflight-emitting layers 24 can be reduced by forming the plurality ofwavelength transforming layers 28 on the plurality of light-emittingstacked layers 24. The distribution of the dominant wavelengths of theplurality of LED chips 30 from the same LED wafer 200 can be convergentto improve the usage efficiency of the plurality of light-emittingstacked layers 24 on the LED wafer 200. Moreover, the above embodimentcan skip sorting and binning processes in the manufacturing process ofthe LED chips to further reduce the cost of production.

In addition, as FIG. 5 shows, the present application can include thestep of forming a wavelength converting layer 32 on the wavelengthtransforming layer 28 after forming the wavelength transforming layer28. The wavelength converting layer 32 includes one or more than onekind of phosphor powders, wherein the phosphor powders include amaterial selected from a group consisting of yellow phosphor powdersincluding yttrium aluminum garnet (YAG) or alkaline-earth halidealuminate, green phosphor powders including BaMgAl₁₀O₁₇:Eu,MnBa₂SiO₄:Eu, (Sr,Ca)SiO₄:Eu, CaSc₂O₄:Eu, Ca₈Mg(SiO₄)₄Cl₂:Eu, Mn,SrSi₂O₂N₂:Eu, LaPO₄:Tb,Ce, Zn2SiO₄:Mn, ZnS:Cu, YBO₃:Ce,Tb,(Ca,Sr,Ba)Al₂O₄:Eu, Sr₂P₂O₇:Eu,Mn, SrAl₂S₄:Eu, BaAl₂S₄:Eu, Sr₂Ga₂S₅:Eu,SiAlON:Eu, KSrPO₄:Tb, or Na₂Gd₂B₂O₇:Ce,Tb, and red phosphor powdersincluding Y₂O₃:Eu, YVO₄:Eu, CaSiAlN3:Eu, (Sr,Ca)SiAlN3:Eu, Sr₂Si₅N₈:Eu,CaSiN₂:Eu, (Y,Gd)BO₃:Eu, (La,Y)₂O₂S:Eu, La₂TeO₆:Eu, SrS:Eu, Gd₂MoO₆:Eu,Y₂WO₆:Eu,Bi, Lu₂WO₆:Eu,Bi, (Ca,Sr,Ba)MgSi₂O₆:Eu,Mn, Sr₃SiO₅:Eu,SrY₂S₄:Eu, CaSiO₃:Eu, Ca₈MgLa(PO₄)₇:Eu, Ca₈MgGd(PO₄)₇:Eu,Ca₈MgY(PO₄)₇:Eu, or CaLa₂S₄:Ce. The above phosphor powders are uniformlyor partially spread on the wavelength transforming layer 28.

In this embodiment, the wavelength converting layer 32 includes at leastone yellow phosphor powder. The wavelength converting layer 32 canabsorb the second light 220 and convert the second light 220 into thirdlight 230 in yellow color, wherein the dominant wavelength of the thirdlight 230 is about 570 nm. Then, the third light 230 of yellow color andthe second light 220 which is not absorbed by the wavelength convertinglayer 32 are mixed to generate a fourth light 240 in white light.

Because the dominant wavelength of the second light 220 is about 460 nmand the second dominant wavelength variation V₂ is less than 10 nm,preferably less than 5 nm. In the embodiment, the distribution range ofthe second dominant wavelengths is between 455 nm and 465 nm. FIG. 6illustrates a CIE 1931 chromaticity diagram of the fourth light 240. AsFIG. 6 shows, the color temperature of the fourth light 240 which isgenerated by mixing the second light 220 and the third light 230 isabout between 6500K and 8500K (the intersection point of the black curveand the solid line in FIG. 6). The difference of the color temperatureof the fourth light 240 is less than 2000K, preferably less than 1000K.

Comparing to the conventional technology that the blue LED whosedominant wavelength is between 450 nm and 470 nm combines with theyellow phosphor powder to generate the white light of which thedifference of the color temperature is 3000K (the intersection point ofthe black curve and the dotted line in FIG. 6), the embodiment of thepresent application significantly increases the uniformity of the lightemitted from each light-emitting stacked layer of an LED wafer.

Furthermore, although the LED chip which is a vertical structure istaken as an example in the above embodiment, the scope of the presentapplication is not limited to the LED of the vertical structure. FIG. 7is a cross-sectional view of another embodiment of the presentapplication. As FIG. 7 shows, an LED wafer 500 includes a substrate 50,and a plurality of light-emitting stacked layers 52, a plurality offirst electrodes 54, a plurality of second electrodes 56, and aplurality of wavelength transforming layers 58 formed on the substrate50, wherein each of the plurality of light-emitting stacked layers 52 atleast includes a first conductivity-type semiconductor layer 520, anactive layer 522, and a second conductivity-type semiconductor layer524. Each of the plurality of light-emitting stacked layers 52 includesa plane exposing the second conductivity-type semiconductor layer 524.Each of the plurality of first electrodes 54 and each of the pluralityof second electrodes 56 are located on the first conductivity-typesemiconductor layer 520 and the second conductivity-type semiconductorlayer 524 respectively. The plurality of wavelength transforming layers58 covers the plurality of light-emitting stacked layers 52.

Moreover, FIGS. 8A and 8B are cross-sectional views of other embodimentsof the present application. The embodiments can further include anelectrical connection structure 60 to connect the adjacentlight-emitting stacked layers 52/52′ in series connection. As FIG. 8Ashows, the electrical connection structure 60 is a metal wire. The wirebonding technology is utilized to electrically connect the secondelectrode 56 of a light-emitting stacked layer 52 and the firstelectrode 54 of another light-emitting stacked layer 52′ to form aseries connection between different light-emitting stacked layers 52 and52′. As FIG. 8B shows, the electrical connection structure 60 can alsoinclude an insulating layer 62 formed between the adjacentlight-emitting stacked layers 52 and 52′, and a metal layer 64 formed onthe insulating layer 62 to electrically connect the second electrode 56of a light-emitting stacked layer 52 and the first electrode 54 ofanother light-emitting stacked layer 52′. Thus, there is a seriesconnection between different light-emitting stacked layers 52 and 52′.

Additionally, as FIG. 9 shows, each of the plurality of light-emittingstacked layers 52 can be diced along the dicing line A to form the LEDchip in the step of dicing the LED wafer. The plurality oflight-emitting stacked layers 52 and 52′ which are connected by theelectrical connection structure 60 in series connection are diced alongthe dicing line B to form an LED array chip 70. In general, the voltagedrop of each of the plurality of light-emitting stacked layer 52 and 52′is about 3.5V. Fourteen light-emitting stacked layers 52 and 52′ whichare in series connection are diced to form an LED array chip 70 and canbe directly applied to the vehicle application which is 48V in thealternating current power supply. Moreover, thirty light-emittingstacked layers 52 and 52′ connected in series can also be diced to formthe LED array chip 70 and can be directly applied to the householdapplication with 100V in the alternating current power supply. Becausethere is a wavelength transforming layer on each of the light-emittingstacked layers 52 and 52′, the dominant wavelengths of each of thelight-emitting stacked layers 52 and 52′ are more consistent. Thus, theprocess of sorting and binning based on the distribution of the dominantwavelengths can be eliminated in the conventional manufacturing processof the LED array chip to reduce the cost of production.

The foregoing description has been directed to the specific embodimentsof this application. It will be apparent, however, that other variationsand modifications may be made to the embodiments without escaping thespirit and scope of the application.

What is claimed is:
 1. A method of manufacturing a light-emitting devicewith narrow dominant wavelength distribution, comprising the steps of:providing a substrate; forming a plurality of light-emitting stackedlayers on the substrate, wherein each of the plurality of light-emittingstacked layers emits a first light, and the first lights emitted by theplurality of light-emitting stacked layers have a first dominantwavelength variation; and forming a plurality of wavelength transforminglayers on the plurality of light-emitting stacked layers, wherein eachof the plurality of wavelength transforming layers absorbs the firstlight and emits a second light, and the second lights emitted by theplurality of wavelength transforming layers having a second dominantwavelength variation smaller than the first dominant wavelengthvariation.
 2. The method of claim 1, wherein the material of theplurality of light-emitting stacked layers comprise a materialcontaining at least one element selected from a group consisting of Al,Ga, In, N, P, and As.
 3. The method of claim 1, wherein the dominantwavelengths of the first lights emitted by the plurality oflight-emitting stacked layers are between 390 nm and 430 nm.
 4. Themethod of claim 1, wherein the first lights emitted by the plurality oflight-emitting stacked layers are totally absorbed by the plurality ofwavelength transforming layers when the plurality of wavelengthtransforming layers is formed on the plurality of light-emitting stackedlayers emitting the first lights.
 5. The method of claim 1, wherein eachof the plurality of wavelength transforming layers at least comprises aphosphor powder or a fluorescent powder, wherein the phosphor powdercomprises a material selected from a group consisting of Si₃MgSi₂O₈:Eu,BaMgAl₁₀O₁₇:Eu, (SrBaCa)₅(PO₄)₃Cl:Eu, Sr₃(Al₂O₅)Cl₂:Eu²⁺, andSr₄Al₁₄O₂₅:Eu.
 6. The method of claim 1, further comprising forming aplurality of wavelength converting layers on the plurality of wavelengthtransforming layers, the plurality of wavelength converting layersabsorbing a portion of the second light and emitting a third light,wherein the second light and the third light are mixed to generate afourth light.
 7. The method of claim 6, wherein the plurality ofwavelength converting layers at least comprises a material selected froma group consisting of yellow phosphor powders comprising yttriumaluminum garnet (YAG) or alkaline-earth halide aluminate, green phosphorpowders comprising BaMgAl₁₀O₁₇:Eu, MnBa₂SiO₄:Eu, (Sr,Ca)SiO₄:Eu,CaSc₂O₄:Eu, Ca₈Mg(SiO₄)₄Cl₂:Eu, Mn, SrSi₂O₂N₂:Eu, LaPO₄:Tb, Ce,Zn2SiO₄:Mn, ZnS:Cu, YBO₃:Ce,Tb, (Ca,Sr,Ba)Al₂O₄:Eu, Sr₂P₂O₇:Eu,Mn,SrAl₂S₄:Eu, BaAl₂S₄:Eu, Sr₂Ga₂S₅:Eu, SiAlON:Eu, KSrPO₄:Tb, orNa₂Gd₂B₂O₇:Ce,Tb, and red phosphor powders comprising Y₂O₃:Eu, YVO₄:Eu,CaSiAlN3:Eu, (Sr, Ca)SiAlN3:Eu, Sr₂Si₅N₈:Eu, CaSiN₂:Eu, (Y,Gd)BO₃: Eu,(La,Y)₂O₂S:Eu, La₂TeO₆:Eu, SrS:Eu, Gd₂MoO₆:Eu, Y₂WO₆:Eu,Bi,Lu₂WO₆:Eu,Bi, (Ca,Sr, Ba)MgSi₂O₆:Eu,Mn, Sr₃SiO₅:Eu, SrY₂S₄:Eu,CaSiO₃:Eu, Ca₈MgLa(PO₄)₇:Eu, Ca₈MgGd(PO₄)₇:Eu, Ca₈MgY(PO₄)₇:Eu, orCaLa₂S₄:Ce.
 8. The method of claim 6, wherein the color temperaturedistribution of the fourth light is less than 2000K.
 9. The method ofclaim 1, further comprising: forming a plurality of electrodes on theplurality of light-emitting stacked layers; and forming an electricalconnection structure among the plurality of electrodes to form seriesconnection among the plurality of light-emitting stacked layers.
 10. Themethod of claim 9, wherein the electrical connection structure is ametal wire.
 11. The method of claim 9, wherein the electrical connectionstructure comprises: a plurality of insulating layers formed among theplurality of light-emitting stacked layers; and metal layerselectrically connecting the plurality of electrodes, formed on theplurality of insulating layers.
 12. The method of claim 1, furthercomprising dicing the substrate.
 13. A light-emitting device with narrowdominant wavelength distribution, comprising: a substrate; a pluralityof light-emitting stacked layers on the substrate, wherein each of theplurality of light-emitting stacked layers emits a first light having afirst dominant wavelength variation; a plurality of electrodes formed onthe plurality of light-emitting stacked layers and electricallyconnecting therewith; and a plurality of wavelength transforming layerscovering the plurality of light-emitting stacked layers, each of theplurality of wavelength transforming layers absorbing the first lightand emitting a second light having a second dominant wavelengthvariation, wherein the first dominant wavelength variation is largerthan the second dominant wavelength variation.
 14. The light-emittingdevice of claim 13, wherein the first light is totally absorbed by theplurality of wavelength transforming layers when the plurality ofwavelength transforming layer is formed on the plurality oflight-emitting stacked layers emitting the first light.
 15. Thelight-emitting device of claim 13, wherein the dominant wavelength ofthe first light is between 390 nm and 430 nm.
 16. The light-emittingdevice of claim 13, wherein each of the plurality of wavelengthtransforming layers at least comprises a phosphor powder or afluorescent powder, wherein the phosphor powder comprises a materialselected from a group consisting of Si₃MgSi₂O₈:Eu, BaMgAl₁₀O₁₇:Eu,(SrBaCa)₅(PO₄)₃Cl:Eu, Sr₃(Al₂O₅)Cl₂:Eu²⁺, and Sr₄Al₁₄O₂₅:Eu.
 17. Thelight-emitting device of claim 13, wherein the plurality oflight-emitting stacked layers comprise a material containing at leastone element selected from a group consisting of Al, Ga, In, N, P, andAs.
 18. The light-emitting device of claim 13, further comprising aplurality of wavelength converting layers on the plurality of wavelengthtransforming layers, the plurality of wavelength-converting layersabsorbing a portion of the second light and emitting a third light,wherein the second light and the third light are mixed to generate afourth light.
 19. The light-emitting device of claim 18, wherein thecolor temperature distribution of the fourth light is less than 2000K.20. The light-emitting device of claim 18, wherein each of the pluralityof wavelength-converting layers at least comprises a material selectedfrom a group consisting of yellow phosphor powders comprising yttriumaluminum garnet (YAG) or alkaline-earth halide aluminate, green phosphorpowders comprising BaMgAl₁₀O₁₇:Eu, MnBa₂SiO₄:Eu, (Sr,Ca)SiO₄:Eu,CaSc₂O₄:Eu, Ca₈Mg(SiO₄)₄Cl₂:Eu, Mn, SrSi₂O₂N₂:Eu, LaPO₄:Tb, Ce,Zn2SiO₄:Mn, ZnS:Cu, YBO₃:Ce,Tb, (Ca,Sr,Ba)Al₂O₄:Eu, Sr₂P₂O₇:Eu,Mn,SrAl₂S₄:Eu, BaAl₂S₄:Eu, Sr₂Ga₂S₅:Eu, SiAlON:Eu, KSrPO₄:Tb, orNa₂Gd₂B₂O₇:Ce,Tb, and red phosphor powders comprising Y₂O₃:Eu, YVO₄:Eu,CaSiAlN3:Eu, (Sr, Ca)SiAlN3:Eu, Sr₂Si₅N₈:Eu, CaSiN₂:Eu, (Y,Gd)BO₃:Eu,(La,Y)₂O₂S:Eu, La₂TeO₆:Eu, SrS:Eu, Gd₂MoO₆:Eu, Y₂WO₆:Eu,Bi,Lu₂WO₆:Eu,Bi, (Ca,Sr, Ba)MgSi₂O₆:Eu,Mn, Sr₃SiO₅:Eu, SrY₂S₄:Eu,CaSiO₃:Eu, Ca₈MgLa(PO₄)₇:Eu, Ca₈MgGd(PO₄)₇:Eu, Ca₈MgY(PO₄)₇:Eu, orCaLa₂S₄:Ce.
 21. The light-emitting device of claim 13, furthercomprising a plurality of electrical connection structures, theplurality of electrical connection structures electrically connectingthe plurality of electrodes to form a series connection among theplurality of light-emitting stacked layers.
 22. The light-emittingdevice of claim 21, wherein each of the plurality of electricalconnection structures is a metal wire.
 23. The light-emitting device ofclaim 21, wherein each of the plurality of electrical connectionstructures comprises: a plurality of insulating layers among theplurality of light-emitting stacked layers; and a metal layerselectrically connecting the plurality of electrodes, formed on theplurality of insulating layers.